isocom components ltd unit 25b, park view road west, park view industrial estate, brenda road hartlepool, cleveland, ts25 1yd tel: (01429) 863609 fax :(01429) 863581 description the IS354 is an optically coupled isolator consisting of two infrared light emitting diodes connected in inverse parallel and npn silicon photo transistor in a space efficient dual in line plastic package. features l marked as fpa1. l current transfer ratio min. 20% l isolation voltage (3.75kv rms ,5.3kv pk ) l all electrical parameters 100% tested l drop in replacement for sharp pc354 applications l computer terminals l industrial systems controllers l measuring instruments l signal transmission between systems of different potentials and impedances isocom inc 1024 s. greenville ave, suite 240, allen, tx 75002 usa tel: (214) 495-0755 fax: (214) 495-0901 e-mail info@isocom.com http://www.isocom.com IS354 db92856l-aas/a3 22/4/02 high density mounting ac input, phototransistor optically coupled isolators dimensions in mm
parameter min typ max units test condition input forward voltage (v f ) 1.2 1.4 v i f = 20ma reverse voltage (v r ) 5 v i r = 10 m a reverse current (i r ) 10 m a v r = 4v output collector-emitter breakdown (bv ceo ) 35 v i c = 0.1ma emitter-collector breakdown (bv eco ) 6 v i e = 10ua collector-emitter dark current (i ceo ) 100 na v ce = 20v coupled current transfer ratio (ctr) 20 400 % 1ma i f , 5v v ce collector-emitter saturation voltagev ce (sat) 0.2 v 20ma i f , 1ma i c input to output isolation voltage v iso 3750 v rms see note 1 5300 v pk see note 1 input-output isolation resistance r iso 5x10 10 w v io = 500v (note 1) output rise time tr 4 18 m s v ce = 2v , output fall time tf 3 18 m s i c = 2ma, r l = 100 w electrical characteristics ( t a = 25c unless otherwise noted ) absolute maximum ratings (25c unless otherwise specified) storage temperature -40c to + 125c operating temperature -30c to + 100c lead soldering temperature (1/16 inch (1.6mm) from case for 10 secs) 260c input diode forward current 50ma reverse voltage 6v power dissipation 70mw output transistor collector-emitter voltage bv ceo 35v emitter-collector voltage bv eco 6v power dissipation 150mw power dissipation total power dissipation 170mw (derate linearly 2.26mw/ c above 25c) note 1 measured with input leads shorted together and output leads shorted together. db92856l-aas/a3 22/4/02
12 / 07 / 01 appendix to mini flat pack fpa - aas/a1 taping dimensions description symbol dimensions in mm ( inches ) tape wide w 12 0.3 ( .47 ) pitch of sprocket holes p 0 4 0.1 ( .15 ) distance of compartment f p 2 5.5 0.1 ( .217 ) 2 0.1 ( .079 ) distance of compartment to compar tment p 1 8 0.1 ( .315 )
12 / 07 / 01 appendix to mini flat pack fpa - aas/a1 characteristic curves -55 0 50 25 75 100 125 125 25 0 50 75 100 -55 fig.2 collector power dissipation vs. ambient temperature fig.4 forward current vs. fig.6 collector current vs. collector-emitter voltage forward voltage collecotr-emitter voltage v ce (v) i f =30ma ta=25 c 5ma 10ma 1ma 20ma pc(max.) o 0.5 0.1 0.2 1 2 5 10 20 50 100 0 20 40 60 80 100 120 140 1 0 10 2 3 4 5 6 7 8 9 0 10 20 30 40 50 0 0 fig.3 collector-emitter saturation voltage fig.5 current transfer ratio vs. forward current vs. forward current ambient temperature ta ( c) forward current i f (ma) forward current i f (ma) v ce =5v ta=25 c o current transfer ratio ctr (%) collector-emitter saturation voltage v ce (sat) (v) 1 0 0 2 2.5 3 4 5 6 collector current ic (ma) 10.0 7.5 5.0 15.0 12.5 ta=25 c ic=0.5ma 3ma 7ma 5ma 1ma o o 20 forward current i f (ma) 1 2 0 5 10 100 200 500 50 fig.1 forward current vs. ambient temperature forward current i f (ma) 10 20 30 50 40 60 collector power dissipation pc (mw) 100 50 150 200 30 forward voltage v f (v) 10 0.5 15 20 25 ambient temperature ta ( c) ta=75 c 50 c o o 25 c -25 c 0 c o o o o
12 / 07 / 01 appendix to mini flat pack fpa - aas/a1 characteristic curves ce v =2v ic=2ma ta=25 c tr tf ts td 0 response time ( s) relative current transfer ratio (%) ambient temperature ta ( c) fig.7 relative current transfer ratio vs. ambient temperature fig.8 collector-emitter saturation voltage vs. ambient temperature ambient temperature ta ( c) fig.10 response time vs. fig.9 collector dark current vs. vs. ambient temperature ambient temperature ta ( c) fig.11 frequency response frequency f (khz) voltage gain av (db) v =2v ic=2ma ta=25 c -20 o 20 40 60 80 100 50 100 150 o 0 o 100 0.02 0.04 0.06 0.08 0.10 0.1 0.1 0.2 0.5 1 2 5 10 0.2 0.5 1 2 5 10 20 50 100 o 20 40 60 100 80 o 0.2 -10 0 1 5 2 0.5 load resistance input output input output vcc td tr tf ts 90% 10% output vcc test circuit for response time test circuit for frequency response 1000 100 10 20 40 60 80 i f =20ma i c =1ma i f =1ma, v ce =5v collector dark current i ceo (na) r l =1k 1k 100 r d r l r d r l load resistance r l (k ) collector-emitter saturation voltage v ce (sat) (v) 1 10 v ce =20v 10000 1000 100
12 / 07 / 01 appendix to mini flat pack fpa - aas/a1 temperature profile of soldering reflow (1) one time soldering reflow is recommended within the condition of temperature and time profile shown below. 30 seconds 1 minute 2 minutes 1.5 minutes 1 minute 25 c 180 c 200 c 230 c (2) when using another soldering method such as infrated ray lamp, the temperature may rise partially in the mold of the device. keep the temperature on the package of the device within the condition of above (1).
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